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ABB 3BHE009681R0101 GVC750BE101 IGCT Module 3BHB013088R0001 5SHY3545L0010

·        ABB ACS 6000 GVC750BE101 3BHE009681R0101 IGCT Module. Active Rectifier Unit (ARU)Self-commutated, 6-pulse,3-level voltage source inverterwith lGCT technology.

·        Design Of Communication Module Between PLC And InstrumentPLC.

·        This compact module packs a powerful punch, combining the strengths of IGCTs and IGBTs to deliver precise control over high-voltage power flows.

·        IGCT for lightning-fast switching: The Integrated Gate-Commutated Thyristor (IGCT) handles high-voltage and high-current applications with lightning-fast switching speeds, ideal for demanding industrial drives and power converters.

·        3BHB013088R0001 3BHE009681R0101 GVC750BE101 ABB module IGCT 5SHY3545L0010   to achieve such a high load capability, a number of improvements to the HPT-IGCT are being implemented with a targeted operating tem- perature increase from 125 °C to 140 °C.

·         In the silicon the corru-gated p-base doping profiles introduced in the HPT-IGCT have been optimized to allow for full SOA exploitation over the whole tempera-ture range from 0 °C to 140 °C. 

ABB 3BHE009681R0101 GVC750BE101 IGCT Module 3BHB013088R0001 5SHY3545L0010

·        ABB ACS 6000 GVC750BE101 3BHE009681R0101 IGCT Module. Active Rectifier Unit (ARU)Self-commutated, 6-pulse,3-level voltage source inverterwith lGCT technology.

·        Design Of Communication Module Between PLC And InstrumentPLC.

·        This compact module packs a powerful punch, combining the strengths of IGCTs and IGBTs to deliver precise control over high-voltage power flows.

·        IGCT for lightning-fast switching: The Integrated Gate-Commutated Thyristor (IGCT) handles high-voltage and high-current applications with lightning-fast switching speeds, ideal for demanding industrial drives and power converters.

·        3BHB013088R0001 3BHE009681R0101 GVC750BE101 ABB module IGCT 5SHY3545L0010   to achieve such a high load capability, a number of improvements to the HPT-IGCT are being implemented with a targeted operating tem- perature increase from 125 °C to 140 °C.

·         In the silicon the corru-gated p-base doping profiles introduced in the HPT-IGCT have been optimized to allow for full SOA exploitation over the whole tempera-ture range from 0 °C to 140 °C.